A market worth hundreds of billions for RF chips: guidelines for domestic substitution

2020-06-17View Original

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RF front-end devices are all manufactured using semiconductor processes; the power amplifiers and low-noise amplifiers used in mobile phones are primarily based on GaN, GaAs, SOI, SiGe, and Si (for high-power power amplifiers used in base stations, GaAs and GaN are mainly employed). The main types of filters are SAW and BAW, both of which use piezoelectric materials as their substrate. RF switches are primarily based on CMOS, Si, GaAs, and GaN materials.

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A market worth hundreds of billions for RF chips: guidelines for domestic substitution

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